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NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
6. Characteristics
Table 8. Electrical characteristics
T amb = 25 ° C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V RWM
reverse standoff voltage
-
-
5
V
I RM
reverse leakage current
V RWM = 5 V
-
5
100
nA
V CL
V BR
r dif
C d
clamping voltage
breakdown voltage
differential resistance
diode capacitance
I PP = 1 A
I PP = 12 A
I R = 1 mA
I R = 1 mA
f = 1 MHz; V R = 0 V
[1][2]
[1][2]
-
-
5.5
-
-
-
-
-
-
35
10
14
9.5
50
45
V
V
V
?
pF
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponential decay waveform.
Measured from pin 1 to 3 or pin 2 to 3.
10 3
001aaa632
1.2
001aaa633
P PP
P PP
P PP(25 ° C)
(W)
0.8
10 2
0.4
10
1
10
10 2
10 3
t p ( μ s)
10 4
0
0
50
100
150
T j ( ° C)
200
T amb = 25 ° C
t p = 8/20 μ s exponential decay waveform
Fig 3.
Peak pulse power dissipation as a function of
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0S2BT_3
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 February 2009
4 of 12
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